ST25N10 n channel enhancement mode mosfet 25.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST25N10 2013. v1 description ST25N10 is the n-channel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos tre nch technology. the st16n10 has been designed specially to improve the overall effi ciency of dc/dc converters using either synchronous or conventional switching pwm co ntrollers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. pin configuration (d-pak) to-252 part marking y: year code a: week code p: process code x: produces code feature 100v/12.0a, r ds(on) = 40m? @v gs = 10v 100v/10.0a, rds(on) = 45m @vgs =4.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability to-252 package design
ST25N10 n channel enhancement mode mosfet 25.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST25N10 2013. v1 soulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage vdss 100 v gate-source voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=100 id 25.0 16.0 a pulsed drain current idm 75 a continuous source current (diode conduction) is 25 a power dissipation ta=25 pd 79 w operation junction temperature tj 150 storgae temperature range tstg -55/150 thermal resistance-junction to ambient rja 110 /w
ST25N10 n channel enhancement mode mosfet 25.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST25N10 2013. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,id=250ma 100 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 2.0 4.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =80v,v gs =0v 1 zero gate voltage drain current i dss v ds =80v,v gs =0v t j =85 100 ua drain-source on- resistance r ds(on) v gs =10v,i d =12a v gs =4.5v,i d =10a 32 38 40 45 m? forward transconductance gfs v ds =50v,i d =9.0a 35 s diode forward voltage v sd i s =9.0a,v gs =0v 1.2 v dynamic total gate charge q g 50 gate-source charge q gs 13.5 gate-drain charge q gd v ds =50v,v gs =10v i d 12a 11 nc input capacitance c iss 2000 output capacitance c oss 450 reverse transfercapacitance c rss v ds =30v,v gs =0v f=1mhz 260 pf 25 turn-on time t d(on) tr 18 60 turn-off time t d(off) tf v dd =50v,r d = 30? i d =1.0a,v gen =10v r g =6? 78 ns
ST25N10 n channel enhancement mode mosfet 25.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST25N10 2013. v1 typical characterictics
ST25N10 n channel enhancement mode mosfet 25.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST25N10 2013. v1
ST25N10 n channel enhancement mode mosfet 25.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST25N10 2013. v1 to-252-2l package outline sop-8p
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